Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6391D
STMicroelectronics
667
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 14SO
12.5 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6386AD
STMicroelectronics
973
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE SOIC-14
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6498LD
STMicroelectronics
970
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
- - - - - - - - - - -
L6494LD
STMicroelectronics
959
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
- - - - - - - - - - -
TD350E
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
L6393D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRDGE 14SO
10 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6392D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE SOIC-14
12.5 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6386ED
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6491D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
10 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.45V,2V 4A,4A
L6386D
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
E-L6386D
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
TD350ID
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER MOS/IGBT ADV 14-SOIC
12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A