- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 5
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18SOIC
|
4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18SOIC
|
4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 42 MPQ: 1
|
IC BRIDGE DRIVER FOR N-CH MOSFET
|
10 V ~ 35 V | -40°C ~ 125°C (TA) | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | 6A，6A |
