- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
|
Texas Instruments |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16DIP
|
5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16DIP
|
5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
Linear Technology/Analog Devices |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DVR HI-SIDE QUAD 16DIP
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | - |
