- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
672
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
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Renesas Electronics America Inc. |
984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
Linear Technology/Analog Devices |
459
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
|
|
Linear Technology/Analog Devices |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1/2BRDG NCH 16DIP
|
5 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
|
|
Linear Technology/Analog Devices |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A |
