- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 25
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Texas Instruments |
2,637
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
|
Texas Instruments |
657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER 16-DIP
|
5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC QUAD MOSFET DRIVER 16-DIP
|
4.75 V ~ 28 V | 0°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Inverting | Low-Side | 4 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
|
|
|
Texas Instruments |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENTARY PWR DRVR 16-DIP
|
5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DUAL OUTPUT DRIVER 16DIP
|
5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC HS MOSFET DRIVER 16-DIP
|
5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DUAL OUTPUT DRIVER 16DIP
|
5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC COMPLEMENTARY PWR DRVR 16-DIP
|
5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA |
