- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 13
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
4,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
6,974
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-SOIC
|
10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | 4 | N-Channel MOSFET | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
10 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 15ns,15ns | 1.2V,2.7V | 4A,4A | ||||
Infineon Technologies |
2,366
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 85ns,30ns | 0.8V,2.2V | 220mA,480mA | ||||
Infineon Technologies |
2,459
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
1,875
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
2,676
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALFBRIDGE 600V 14SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A |