Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 63
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR21834STRPBF
Infineon Technologies
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IR21844STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IRS21814STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IR21094STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IRS2453DSTRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER FULL SELF OSC 14-SOIC
10 V ~ 15.6 V -25°C ~ 125°C (TJ) RC Input Circuit Synchronous Half-Bridge 4 N-Channel MOSFET 600V 120ns,50ns 4.7V,9.3V 180mA,260mA
UCC27714DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
10 V ~ 18 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.2V,2.7V 4A,4A
IRS2890DSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,30ns 0.8V,2.2V 220mA,480mA
IR21064STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IRS21064STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
IRS21864STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
IRS21834STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS21844STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS21094STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
IR21814STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
AUIRS21814STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.8V,2.5V 1.9A,2.3A
ISL6610CBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR DUAL SYNC 14-SOIC
4.5 V ~ 5.5 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 36V 8ns,8ns - -,4A
IX21844NTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR HALF 600V 14SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 23ns,14ns 0.8V,2V 1.4A,1.8A
IRS24531DSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR FULL BRIDGE OSC 14-SOIC
10 V ~ 15.6 V -25°C ~ 125°C (TJ) RC Input Circuit Synchronous Half-Bridge 4 N-Channel MOSFET 600V 120ns,50ns 4.7V,9.3V 180mA,260mA
TPS2834DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC NONINV SYN FET DRVR 14-SOIC
4.5 V ~ 15 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 28V 50ns,40ns 1V,2V 2.7A,2.4A
IRS21084STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA