- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 12
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
502
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tube | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.2V,2.7V | ||||
Infineon Technologies |
1,322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tape & Reel (TR) | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.2V,2.7V | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Cut Tape (CT) | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.2V,2.7V | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
- | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.2V,2.7V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Infineon Technologies |
1,875
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Infineon Technologies |
1,875
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 620 MPQ: 1
|
IC DRIVER PWR 1CH HI SPD 14-SOIC
|
Tape & Reel (TR) | 16 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,12ns | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER PWR 1CH HI SPD 14-SOIC
|
Tube | 16 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,12ns | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER PWR 1CH HI SPD 14-SOIC
|
Tape & Reel (TR) | 16 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,12ns | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3100 MPQ: 1
|
IC DRIVER PWR 1CH HI SPD 14-SOIC
|
Tube | 16 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,12ns | - |