- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 19
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Single | Low-Side | 1 | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
|
Tape & Reel (TR) | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Synchronous | Half-Bridge | 2 | 35V | 5ns，5ns | - | 2A，2A | ||
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR DUAL 4A CMOS 8MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL 4A CMOS 8MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL 4A CMOS 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | Independent | Low-Side | 2 | - | 12ns，9ns | - | 5A，5A |
