Voltage - Supply:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDL05I06PFXUMA1
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Tape & Reel (TR) EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06PFXUMA1
Infineon Technologies
10,174
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Cut Tape (CT) EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06PFXUMA1
Infineon Technologies
10,174
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
- EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Tape & Reel (TR) EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Cut Tape (CT) EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
- EiceDriver 10 V ~ 20 V -40°C ~ 150°C (TJ) Independent IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
TDA21106
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER DUAL HS MOSFET 8DSO
Tape & Reel (TR) CoreControl 10.8 V ~ 13.2 V -25°C ~ 150°C (TJ) Synchronous N-Channel MOSFET 45V 20ns,15ns - 4A,4A
TDA21107
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER DUAL HS MOSFET 8DSO
Tape & Reel (TR) CoreControl 10.8 V ~ 13.2 V 0°C ~ 150°C (TJ) Synchronous N-Channel MOSFET 30V 30ns,40ns - -