- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | 500mA,500mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL HS MOSFET 8DSO
|
CoreControl | 10.8 V ~ 13.2 V | -25°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 45V | 20ns,15ns | - | 4A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL HS MOSFET 8DSO
|
CoreControl | 10.8 V ~ 13.2 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 30V | 30ns,40ns | - | - |