- Operating Temperature:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 9
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
3.0A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C | Inverting | Independent | High-Side | IGBT | 12ns,12ns | 3A,3A | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
3.0A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C | Inverting,Non-Inverting | Independent | High-Side | IGBT | 12ns,12ns | 3A,3A | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C (TA) | Inverting | Single | Low-Side | IGBT | 12ns,12ns | 4.5A,4.5A | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C (TA) | Non-Inverting | Single | Low-Side | IGBT | 12ns,12ns | 4.5A,4.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
3.0A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C | Non-Inverting | Independent | High-Side | IGBT | 12ns,12ns | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
-40°C ~ 125°C (TA) | Inverting,Non-Inverting | Single | Low-Side | IGBT | 12ns,12ns | 4.5A,4.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8TDFN
|
-40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 11.5ns,10ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8TDFN
|
-40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 11.5ns,10ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8TDFN
|
-40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 11.5ns,10ns | 1.5A,1.5A |