Fabricant:
Voltage - Supply:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Input Type Channel Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
RT9624BZS
Richtek USA Inc.
Enquête
-
-
MOQ: 3500  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
Tape & Reel (TR) 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
RT9624BZS
Richtek USA Inc.
1,573
3 jours
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
Cut Tape (CT) 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
RT9624BZS
Richtek USA Inc.
1,573
3 jours
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
- 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
RT9624AZS
Richtek USA Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
Tape & Reel (TR) 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
RT9624AZS
Richtek USA Inc.
699
3 jours
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
Cut Tape (CT) 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
RT9624AZS
Richtek USA Inc.
699
3 jours
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK 8SOP
- 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Synchronous 15V 25ns,12ns 0.7V,3.2V -
BS2100F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET
Tape & Reel (TR) 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) Non-Inverting Independent 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2100F-E2
ROHM Semiconductor
2,188
3 jours
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET
Cut Tape (CT) 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) Non-Inverting Independent 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2100F-E2
ROHM Semiconductor
2,188
3 jours
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET
- 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) Non-Inverting Independent 600V 200ns,100ns 1V,2.6V 60mA,130mA