- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
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|
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ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
5,950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.9V | 250mA，500mA | ||
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|
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ON Semiconductor |
8,977
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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ON Semiconductor |
4,042
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
SOP8 HIGH-CURRENT HIGH/LOW-SIDE
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- | - | - | 8-SOIC (0.154"，3.90mm Width) | - | - | - | - | - | - | - | - | - | ||
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ON Semiconductor |
5,445
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HALF BRIDGE GATE DRIVER
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- | - | - | 8-SOIC (0.154"，3.90mm Width) | - | - | - | - | - | - | - | - | - | ||
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Richtek USA Inc. |
1,573
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
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- | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
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ON Semiconductor |
2,800
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH SIDE GATE DRIVER
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- | - | - | 8-SOIC (0.154"，3.90mm Width) | - | - | - | - | - | - | - | - | - | ||
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Richtek USA Inc. |
699
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DVR 1CH SYNC BUCK 8SOP
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- | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
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ROHM Semiconductor |
876
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 8SOP
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- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
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Automotive，AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | 4.5A，4.5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HALF BRIDGE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | 2.5A，2.5A | ||
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ROHM Semiconductor |
2,188
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
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- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
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ROHM Semiconductor |
21
|
3 jours |
-
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MOQ: 1 MPQ: 1
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600V HIGH VOLTAGE HIGH & LOW-SID
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- | - | - | 8-SOIC (0.173"，4.40mm Width) | - | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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INTEGRATED CIRCUIT
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Automotive，AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | 4.5A，4.5A |
