Découvrez les produits 6
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6390DTR
STMicroelectronics
2,500
3 jours
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MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
TD310IDT
STMicroelectronics
7,500
3 jours
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MOQ: 2500  MPQ: 1
IC DRIVER MOS/IGBT TRIPLE 16SOIC
4 V ~ 16 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Independent Low-Side 3 IGBT,N-Channel MOSFET - - 0.8V,2V -
DGD2113S16-13
Diodes Incorporated
Enquête
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MOQ: 1500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SO
10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,13ns 6V,9.5V 2.5A,2.5A
DGD2110S16-13
Diodes Incorporated
Enquête
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-
MOQ: 1500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SO
10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 15ns,13ns 6V,9.5V 2.5A,2.5A
HIP4082IBZTR5676
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER FET H-BRDG 80V 16SOIC
8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
L9610C013TR
STMicroelectronics
Enquête
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MOQ: 2500  MPQ: 1
IC CTRLR PWM POWER MOS SO-16
6 V ~ 16 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 N-Channel,P-Channel MOSFET - - 0.8V,2V -