- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 6
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 16SO
|
12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOS/IGBT TRIPLE 16SOIC
|
4 V ~ 16 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Independent | Low-Side | 3 | IGBT,N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,13ns | 6V,9.5V | 2.5A,2.5A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 15ns,13ns | 6V,9.5V | 2.5A,2.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16SOIC
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC CTRLR PWM POWER MOS SO-16
|
6 V ~ 16 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | - | - | 0.8V,2V | - |