- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 5
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
pSemi |
500
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Tape & Reel (TR) | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | - | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Cut Tape (CT) | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | - | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
- | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | - | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 20 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A DIE
|
Tube | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC POWER MANAGEMENT
|
Bulk | 4.5 V ~ 18 V | 0°C ~ 70°C | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A |