Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
PE29100A-X
pSemi
500
3 jours
-
MOQ: 500  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Tape & Reel (TR) 4 V ~ 5.5 V -40°C ~ 125°C (TJ) - Synchronous Half-Bridge N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Cut Tape (CT) 4 V ~ 5.5 V -40°C ~ 125°C (TJ) - Synchronous Half-Bridge N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
- 4 V ~ 5.5 V -40°C ~ 125°C (TJ) - Synchronous Half-Bridge N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
UCC27201ATDA2
Texas Instruments
Enquête
-
-
MOQ: 20  MPQ: 1
IC DVR HIGH/LOW SIDE 3A DIE
Tube 8 V ~ 17 V -40°C ~ 140°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A
TSC426C/D
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC POWER MANAGEMENT
Bulk 4.5 V ~ 18 V 0°C ~ 70°C Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A