Découvrez les produits 93
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS2332DJTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332DJTRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330DJPBF
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DVR 3-PHASE BRIDGE PLCC44
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330JPBF
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DVR 3-PHASE BRIDGE PLCC44
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332DJPBF
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DVR 3-PHASE BRIDGE PLCC44
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332JPBF
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DVR 3-PHASE BRIDGE PLCC44
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
AUIRS2332J
Infineon Technologies
Enquête
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MOQ: 81  MPQ: 1
IC DRVR BRIDGE 3-PHASE 44PLCC
Tube Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting 3-Phase IGBT,N-Channel,P-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA