Découvrez les produits 74
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5106SD/NOPB
Texas Instruments
49,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A
LM5105SD/NOPB
Texas Instruments
21,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 15ns,15ns 0.8V,2.2V 1.8A,1.8A
LM5113SD/NOPB
Texas Instruments
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 4A 10SON
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5110-1SD/NOPB
Texas Instruments
17,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Low-Side N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5102SD/NOPB
Texas Instruments
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5104SD/NOPB
Texas Instruments
4,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
UCC27212DPRT
Texas Instruments
502
3 jours
-
MOQ: 250  MPQ: 1
IC HALF-BRIDGE GATE DRVR 10WSON
- 7 V ~ 17 V -40°C ~ 140°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 100V 7.8ns,6ns 1.2V,2.55V 4A,4A
LM5113SDE/NOPB
Texas Instruments
750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRIVER HALF BRIDGE 10SON
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
SM74104SDX/NOPB
Texas Instruments
4,500
3 jours
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2V 1.6A,1.6A
LM5110-1SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5110-3SD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5106SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A
LM5101ASD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 430ns,260ns 2.3V,- 3A,3A
LM5101BSD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 570ns,430ns 2.3V,- 2A,2A
SM74104SD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2V 1.6A,1.6A
LM5100ASD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 430ns,260ns 2.3V,- 3A,3A
LM25101BSDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DVR HI/LO SIDE 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 100V 570ns,430ns 2.3V,- 2A,2A
LM25101CSDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DVR HI/LO SIDE 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 100V 990ns,715ns 2.3V,- 1A,1A
LM25101BSD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HI/LO SIDE 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 100V 570ns,430ns 2.3V,- 2A,2A
LM25101ASD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HI/LO SIDE 10WSON
- 9 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge N-Channel MOSFET 100V 430ns,260ns 2.3V,- 3A,3A