- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 57
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
57,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 28ns,13ns | 0.8V,2V | 3A,7A | ||||
Maxim Integrated |
4,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 28ns,13ns | 0.8V,2V | 3A,7A | ||||
Maxim Integrated |
4,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 28ns,13ns | 0.8V,2V | 3A,7A | ||||
Maxim Integrated |
2,281
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR TTL SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 25ns,14ns | 0.8V,2V | 3A,7A | ||||
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A |