- Packaging:
-
- Operating Temperature:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 35
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
- | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
- | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
- | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 3ns,2ns | - | 4.5A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | -40°C ~ 125°C (TJ) | IGBT,N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HIGH SPEED SOT23-6
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A |