Fabricant:
Voltage - Supply:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 3
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX620EWN+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
4.5 V ~ 16.5 V -40°C ~ 85°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
MAX620CWN+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
4.5 V ~ 16.5 V 0°C ~ 70°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
IX6R11S6T/R
IXYS
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 4A 18-SOIC
10 V ~ 35 V -40°C ~ 125°C (TA) Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V 6A,6A