Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 165
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPS2829DBVT
Texas Instruments
1,000
3 jours
-
MOQ: 250  MPQ: 1
IC HS MOSFET DRIVER SOT23-5
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2829DBVT
Texas Instruments
1,352
3 jours
-
MOQ: 1  MPQ: 1
IC HS MOSFET DRIVER SOT23-5
Cut Tape (CT) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2829DBVT
Texas Instruments
1,352
3 jours
-
MOQ: 1  MPQ: 1
IC HS MOSFET DRIVER SOT23-5
- - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2829QDBVRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC HS MOSFET DRIVER SOT-23-5
Tape & Reel (TR) Automotive,AEC-Q100 4 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET 34V 14ns,14ns - 2A,2A
TPS2829QDBVRQ1
Texas Instruments
1,217
3 jours
-
MOQ: 1  MPQ: 1
IC HS MOSFET DRIVER SOT-23-5
Cut Tape (CT) Automotive,AEC-Q100 4 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET 34V 14ns,14ns - 2A,2A
TPS2829QDBVRQ1
Texas Instruments
1,217
3 jours
-
MOQ: 1  MPQ: 1
IC HS MOSFET DRIVER SOT-23-5
- Automotive,AEC-Q100 4 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET 34V 14ns,14ns - 2A,2A
TPS2818DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2818DBVR
Texas Instruments
5,525
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
Cut Tape (CT) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2818DBVR
Texas Instruments
5,525
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
- - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
UCC27536DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,10ns 1.2V,2.2V 2.5A,2.5A
UCC27536DBVR
Texas Instruments
3,182
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,10ns 1.2V,2.2V 2.5A,2.5A
UCC27536DBVR
Texas Instruments
3,182
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,10ns 1.2V,2.2V 2.5A,2.5A
TPS2816DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2816DBVR
Texas Instruments
1,857
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
Cut Tape (CT) - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2816DBVR
Texas Instruments
1,857
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTING FET DRVR SOT-23-5
- - 4 V ~ 14 V -40°C ~ 125°C (TA) SOT-23-5 Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
UCC27537DBVT
Texas Instruments
1,000
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Non-Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27537DBVT
Texas Instruments
1,162
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Non-Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27537DBVT
Texas Instruments
1,162
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-5 Non-Inverting High-Side or Low-Side IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
TPS2819QDBVRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR NON-INV SOT23-5
Tape & Reel (TR) Automotive,AEC-Q100 4 V ~ 14 V -40°C ~ 125°C (TJ) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2819QDBVRQ1
Texas Instruments
1,725
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR NON-INV SOT23-5
Cut Tape (CT) Automotive,AEC-Q100 4 V ~ 14 V -40°C ~ 125°C (TJ) SOT-23-5 Non-Inverting Low-Side N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A