- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 69
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SON
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-SON-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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Texas Instruments |
1,075
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SON
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-SON-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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Texas Instruments |
1,075
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SON
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- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-SON-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
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Texas Instruments |
4,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC MOSFET GATE DRVR 7.6A 6WSON
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Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
|
Texas Instruments |
4,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
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- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 3ns，2ns | - | 4.5A，7.6A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
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|
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Texas Instruments |
1,307
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
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|
|
Texas Instruments |
1,307
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
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|
|
Texas Instruments |
1,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
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|
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Texas Instruments |
1,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,520
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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|
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Maxim Integrated |
1,520
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 6.5ns，4.5ns | - | 4A，8A | ||
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|
|
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 6.5ns，4.5ns | - | 4A，8A | ||
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|
|
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 6.5ns，4.5ns | - | 4A，8A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 14ns，12ns | 0.8V，2.3V | 3A，7A |
