Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6747ATR
STMicroelectronics
Enquête
-
-
MOQ: 4000  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
Tape & Reel (TR) 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFPN (3x3) Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 3.5A,-
L6747ATR
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
Cut Tape (CT) 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFPN (3x3) Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 3.5A,-
L6747ATR
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
- 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFPN (3x3) Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 3.5A,-
ISL89164FRTCZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-TDFN (3x3) Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89164FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-TDFN (3x3) Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
MCP1415T-E/MC
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
MOSFET DRVR 1.5A SGL HS 8DFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-DFN (2x3) Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
L6747A
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
Tray 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFPN (3x3) Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 3.5A,-