- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 9
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
|
|
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
|
|
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
MOSFET DRVR 1.5A SGL HS 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Inverting | Single | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
MOSFET DRVR 1.5A SGL HS 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Non-Inverting | Single | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-DFN (3x3) | Non-Inverting | Synchronous | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 30ns，27ns | 0.7V，3.4V | 2.5A，1.6A |
