- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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MOSFET DRIVER 8DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -10°C ~ 125°C (TJ) | 8-DFN-EP (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR SYNCH RECT 8DFN
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Tape & Reel (TR) | 5.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-DFN-EP (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 31ns，18ns | -，3A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR SYNCH RECT 8DFN
|
Tape & Reel (TR) | 5.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 31ns，18ns | -，3A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 2A，2A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
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Tape & Reel (TR) | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
2,779
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
|
Cut Tape (CT) | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
2,779
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
|
- | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | 10A，10A | |||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR SYNCH RECT 8DFN
|
Tape & Reel (TR) | 5.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-DFN-EP (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 31ns，18ns | -，3A |
