Découvrez les produits 21
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5109BQNGTTQ1
Texas Instruments
Enquête
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-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Tape & Reel (TR) Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Half-Bridge N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
LM5109BQNGTTQ1
Texas Instruments
1,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Cut Tape (CT) Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Half-Bridge N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
LM5109BQNGTTQ1
Texas Instruments
1,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
- Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Half-Bridge N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
ISL89163FRTCZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-TDFN (3x3) Non-Inverting Low-Side N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89163FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-TDFN (3x3) Non-Inverting Low-Side N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
MCP14A0303T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0303T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0303T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0305T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting,Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0305T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting,Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0305T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting,Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0303-E/MNY
Microchip Technology
1,700
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0304-E/MNY
Microchip Technology
1,200
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0305-E/MNY
Microchip Technology
1,200
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting,Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0304T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0304T-E/MNY
Microchip Technology
3,250
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0304T-E/MNY
Microchip Technology
3,250
3 jours
-
MOQ: 1  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- - 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Non-Inverting High-Side IGBT - 12ns,12ns 0.8V,2V 3A,3A
LM5109BQNGTRQ1
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Tape & Reel (TR) Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Half-Bridge N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
MCP14A0153T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1.5A DUAL 8TDFN
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TDFN (2x3) Inverting Low-Side N-Channel,P-Channel MOSFET - 11.5ns,10ns 0.8V,2V 1.5A,1.5A
MCP14A0154T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1.5A DUAL 8TDFN
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TDFN (2x3) Non-Inverting Low-Side N-Channel,P-Channel MOSFET - 11.5ns,10ns 0.8V,2V 1.5A,1.5A