Découvrez les produits 22
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Input Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
EL7457CLZ-T7
Renesas Electronics America Inc.
5,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CLZ-T7
Renesas Electronics America Inc.
6,914
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16QFN
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CLZ-T7
Renesas Electronics America Inc.
6,914
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16QFN
- 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CLZ
Renesas Electronics America Inc.
4,780
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER CMOS QUAD 40MHZ 16QFN
Tube 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
HIP2100IRZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
Tape & Reel (TR) 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2101IRZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
Tape & Reel (TR) 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1200  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
Tray 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2100IRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 900  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
Tube 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
EL7457CLZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CLZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16QFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN-EP (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
HIP2100IR
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 900  MPQ: 1
IC DRIVER HALF-BRIDGE 16-QFN
Tube 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2101IR
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DRIVER HALF-BRIDGE 16-QFN
Tube 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
EL7457CL
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 720  MPQ: 1
IC DVR CMOS QUAD 40MHZ 16-QFN
Tube 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CL-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CL-T7
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-QFN (4x4) Non-Inverting High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
HIP2100IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
Tape & Reel (TR) 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2101IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
Tape & Reel (TR) 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-QFN-EP (5x5) Non-Inverting Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
MD1813K6-G
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
IC MOSFET DRIVER HI SPEED 16QFN
Tape & Reel (TR) 4.5 V ~ 13 V -20°C ~ 125°C (TJ) 16-QFN (4x4) Non-Inverting Half-Bridge 4 N-Channel,P-Channel MOSFET - 6ns,6ns 0.3V,1.7V 2A,2A
MD1811K6-G
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DRIVER HI SPEED 16QFN
Tape & Reel (TR) 5 V ~ 12 V -20°C ~ 125°C (TJ) 16-QFN (4x4) Non-Inverting Half-Bridge 4 N-Channel,P-Channel MOSFET - 6ns,6ns 0.3V,1.7V 2A,2A
MD1810K6-G
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DRIVER HI SPEED 16QFN
Tape & Reel (TR) 5 V ~ 12 V -20°C ~ 125°C (TJ) 16-QFN (4x4) Non-Inverting Half-Bridge 4 N-Channel,P-Channel MOSFET - 6ns,6ns 0.3V,1.7V 2A,2A