Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 175
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5104SD
Texas Instruments
Enquête
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MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5104SD
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
Cut Tape (CT) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5104SD
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5105SD
Texas Instruments
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,15ns 0.8V,2.2V 1.8A,1.8A
LM5105SD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,15ns 0.8V,2.2V 1.8A,1.8A
LM5105SD
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,15ns 0.8V,2.2V 1.8A,1.8A
LM5106SD
Texas Instruments
Enquête
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MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A
LM5106SD
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A
LM5106SD
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A
LM5110-2SD
Texas Instruments
Enquête
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MOQ: 1000  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
Tape & Reel (TR) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting Independent Low-Side 2 N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5110-2SD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
Cut Tape (CT) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting Independent Low-Side 2 N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5110-2SD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DVR DUAL 5A NEG VOUT 10WSON
- - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 10-WSON (4x4) Inverting Independent Low-Side 2 N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
ISL78420ARTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Tube Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-TDFN (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V 2A,2A
UCC27212DPRR
Texas Instruments
Enquête
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MOQ: 3000  MPQ: 1
UCC27212DPRR
Tape & Reel (TR) - 7 V ~ 17 V -40°C ~ 140°C (TJ) 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 7.8ns,6ns 1.2V,2.55V 4A,4A
NCP81075MTTXG
ON Semiconductor
Enquête
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MOQ: 4000  MPQ: 1
HIGH PERFORMANCE DUAL MOS
- - 8.5 V ~ 20 V -40°C ~ 140°C (TJ) 10-WDFN (4x4) Non-Inverting Independent High-Side or Low-Side 2 N-Channel MOSFET 200V 8ns,7ns 0.8V,2.7V 4A,4A