- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 170
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Tape & Reel (TR) | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Cut Tape (CT) | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 15 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 15 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 4.5 V ~ 15 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,595
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tube | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HS 8SOIC
|
Tube | 4.75 V ~ 5.25 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A |
