- Voltage - Supply:
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- Channel Type:
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- Driven Configuration:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 50
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
4,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-DIP
|
4.75 V ~ 5.25 V,4.75 V ~ 24 V | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
409
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
4.5 V ~ 15 V | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
3,014
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
5 V ~ 35 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2V | 3A,3A | ||||
Texas Instruments |
14,018
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
4.75 V ~ 5.25 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,532
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
4.75 V ~ 5.25 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
6,078
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
4.75 V ~ 5.25 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
3,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
4.5 V ~ 5.5 V | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
4.5 V ~ 18 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
4.5 V ~ 18 V | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT POWER DRIVER 8-DIP
|
5 V ~ 40 V | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 60ns,60ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Maxim Integrated |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-DIP
|
4.5 V ~ 18 V | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Renesas Electronics America Inc. |
3,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
4.5 V ~ 15 V | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HV 8-DIP
|
4.5 V ~ 5.5 V | Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
Maxim Integrated |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
4.5 V ~ 18 V | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1100 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HS 8-DIP
|
4.75 V ~ 5.25 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA |