- Series:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 321
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
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Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 8-VDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 5ns,5ns | - | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET GATE DRIVER SON-8
|
Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 8-SOIC (0.154",3.90mm Width) | 8-SON | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 5ns,5ns | - | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | - | 15ns,12ns | 0.7V,1.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 16ns,11ns | 0.6V,3.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 16ns,11ns | 0.6V,3.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | - | 4.5 V ~ 5.5 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 16ns,11ns | 0.6V,3.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
4,244
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
4,244
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
19,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
19,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
|
- | - | 4.5 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Microchip Technology |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
7,711
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Linear Technology/Analog Devices |
5,689
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
1,242
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR P-CH SINGLE 8-MSOP
|
Tube | - | 4.5 V ~ 13.2 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Single | High-Side | 1 | P-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
9,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - |