- Series:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 321
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
- | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
66
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
36
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
57
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
33
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 700 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
43
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 660 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A |