- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR NONINV 1.5A 8-DFN
|
-55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
-55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
-55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-SOIC
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-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 6-DFN
|
-55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSF DRVR FAST DUAL INV 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR FAST DUAL INV 6-DFN
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-55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 6-DFN
|
-55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
Microchip Technology |
3,294
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8SOIC
|
-40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
3,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8SOIC
|
-40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER 9A 6-DFN
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-55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER SGL 9A 6-DFN
|
-55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | 9A，9A |
