- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 53
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
2,094
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
2,089
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
1,015
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 18ns,18ns | 0.8V,3V | 3A,3A | ||||
IXYS Integrated Circuits Division |
376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 18ns,18ns | 0.8V,3V | 3A,3A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 18ns,18ns | 0.8V,3V | 3A,3A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSF DRVR FAST DUAL INV 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 4A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER 4A 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 9A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER 9A 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 14A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 1V,2.5V | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER 14A 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 1V,2.5V | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 4A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER 4A 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 9A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER 9A 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 14A 8-DIP
|
-55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 1V,2.5V | 14A,14A |