- Packaging：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 61
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
409
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL PWR 8-SOIC
|
Tube | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Texas Instruments |
4,429
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
Tube | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC BUCK FET DRIVER 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 28V | 50ns，50ns | - | 2.7A，2.4A | ||
|
|
|
Texas Instruments |
288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER 14-HTSSOP
|
Tube | -40°C ~ 125°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 28V | 50ns，40ns | 1V，2V | 2.7A，2.4A | ||
|
|
|
Texas Instruments |
211
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC BUCK FET DRIVER 14-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 28V | 50ns，40ns | 1V，2V | 2.7A，2.4A | ||
|
|
|
Texas Instruments |
256
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC BUCK FET DRIVER 14-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Synchronous | High-Side | 2 | N-Channel MOSFET | 28V | 50ns，50ns | - | 2.7A，2.4A | ||
|
|
|
Texas Instruments |
401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC BUCK FET DRIVER 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 28V | 50ns，40ns | 1V，2V | 2.7A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
945
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
Tube | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
Tube | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A |
