- Packaging:
-
- Operating Temperature:
-
- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 73
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
7,348
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
7,348
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
- | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
3,585
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
3,585
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
3,908
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
5,790
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
1,303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL PWR 8-SOIC
|
Tube | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
3,956
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A |