Supplier Device Package:
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 19
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Operating Temperature Package / Case Supplier Device Package Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
ISL6615AIBZ
Renesas Electronics America Inc.
159
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 8-SOIC
-40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 13ns,10ns 2.5A,4A
ISL6615IRZ
Renesas Electronics America Inc.
127
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 10-DFN
-40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 13ns,10ns 2.5A,4A
ISL6622CBZ
Renesas Electronics America Inc.
521
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 26ns,18ns 1.25A,2A
ISL6622ACRZ
Renesas Electronics America Inc.
333
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC BUCK 10-DFN
0°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 26ns,18ns 1.25A,2A
ISL6622IRZ
Renesas Electronics America Inc.
141
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC BUCK 10-DFN
-40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 26ns,18ns 1.25A,2A
ISL6594DCRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1200  MPQ: 1
IC MOSFET DRVR SYNC BUCK 10-DFN
0°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 26ns,18ns 1.25A,2A
ISL6622CRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNC BUCK 10-DFN
0°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 26ns,18ns 1.25A,2A
ISL6615CRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 10-DFN
0°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 13ns,10ns 2.5A,4A
ISL6615ACRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 10-DFN
0°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 13ns,10ns 2.5A,4A
ISL6615AIRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 10-DFN
-40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 13ns,10ns 2.5A,4A
ISL6622IBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
-40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 26ns,18ns 1.25A,2A
ISL6615ACBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 8-SOIC
0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 13ns,10ns 2.5A,4A
ISL6615CBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 8-SOIC
0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 13ns,10ns 2.5A,4A
ISL6594DCBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 26ns,18ns 1.25A,2A
ISL6615IBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC HF 6A 8-SOIC
-40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 13ns,10ns 2.5A,4A
ISL6622ACBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 26ns,18ns 1.25A,2A
ISL6622AIBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
-40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 26ns,18ns 1.25A,2A
ISL6622AIRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNC BUCK 10-DFN
-40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 26ns,18ns 1.25A,2A
ISL6615AFRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER N-CH 10DFN
-40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) 13ns,10ns 2.5A,4A