- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Gate Type：
-
- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 32
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
|
|
|
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
-40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 3ns，2ns | - | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 3ns，2ns | - | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HIGH SPEED SOT23-6
|
-40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 3ns，2ns | - | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE 6WQFN
|
-40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | N-Channel MOSFET | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 82ns，12.5ns | - | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
-40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | N-Channel MOSFET | 3ns，2ns | - | 4.5A，7.6A |
