- Operating Temperature：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 5
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
-40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 250ns，250ns | 0.8V，3V | 130mA，130mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4860 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 14SOP
|
-40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 50ns，30ns | 1.2V，2.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 45 MPQ: 1
|
IC DRIVER HALF-BRIDGE 16-SOIC
|
-40°C ~ 150°C (TJ) | - | - | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT | - | - | - | ||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
-40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
-40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 300mA，600mA |
