- Packaging：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 66
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
7,173
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
5,639
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
4,679
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
3,463
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
2,088
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL IN/NON 8SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
4,958
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3 jours |
-
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MOQ: 1 MPQ: 1
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DUAL LOW SIDE MOSFET DRIVER
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
1,297
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
2,092
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,461
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,002
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DIFF 8-SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
2,404
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-SOIC
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Tube | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
991
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
715
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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2A MOSFET 8 DFN DUAL INV/NON-INV
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Tape & Reel (TR) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting，Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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2A 8 SOIC DUAL INV/NON-INVERTING
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Tape & Reel (TR) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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2A 8 DFN DUAL INVERTING
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Tape & Reel (TR) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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2A 8 SOIC DUAL INVERTING
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Tape & Reel (TR) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A |
