- Packaging:
-
- Series:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Input Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 20
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
45,818
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
IXYS Integrated Circuits Division |
831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tube | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
Infineon Technologies |
108
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel MOSFET | - | 33ns,33ns (Max) | 0.8V,2.5V | 6A,6A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 950 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 475 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel MOSFET | - | 33ns,33ns (Max) | 0.8V,2.5V | 6A,6A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
- | - | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | CMOS/TTL | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
Tape & Reel (TR) | - | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | CMOS/TTL | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A |