- Packaging:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 25
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
45,818
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8-SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
1,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
IXYS Integrated Circuits Division |
831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
Infineon Technologies |
108
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 33ns,33ns (Max) | 0.8V,2.5V | 6A,6A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 950 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 950 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tube | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2565 MPQ: 1
|
IC DRIVER HI SIDE RECHARGE 8-SOI
|
Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | N-Channel MOSFET | 150V | 200ns,100ns | 1.4V,3V | 1.5A,1.5A |