- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,500
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3 jours |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
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μHVIC | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
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Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 33ns，33ns (Max) | 0.8V，2.5V | 6A，6A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-SOIC
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HI SIDE RECHARGE 8SOIC
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | N-Channel MOSFET | 150V | 200ns，100ns | 1.4V，3V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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5-AMP DUAL LOW-SIDE MOSFET DRIVE
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.8V，2.5V | 5A，5A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
5A，DUAL LOW-SIDE，NON-INVERTING
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- | -55°C ~ 150°C | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | CMOS/TTL | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.8V，2.5V | 5A，5A |
