- Packaging:
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- Series:
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- Operating Temperature:
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- Package / Case:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
45,818
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
IXYS Integrated Circuits Division |
831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tube | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 5A,5A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | - | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | - | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | - | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 33ns,33ns (Max) | 6A,6A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 475 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 100ns,25ns | 200mA,350mA | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 33ns,33ns (Max) | 6A,6A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
- | - | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | CMOS/TTL | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 5A,5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
Tape & Reel (TR) | - | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | CMOS/TTL | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 5A,5A |