- Series:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 169
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A 20NS 6-TDFN
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Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-TDFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | - | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-TDFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DVR 4A 20NS DUAL 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns,26ns | - | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
Linear Technology/Analog Devices |
794
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV 8-MSOP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.3V,1.6V | 2.4A,2.4A | ||||
Linear Technology/Analog Devices |
573
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV 8-MSOP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.2V,1.6V | 1.1A,1.1A | ||||
Linear Technology/Analog Devices |
119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV 8-MSOP
|
Tube | - | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.2V,1.6V | 1.1A,1.1A |