Découvrez les produits 169
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX5078BATT/V+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A 20NS 6-TDFN
Tape & Reel (TR) Automotive,AEC-Q100 -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5054AATA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-TDFN
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns - 4A,4A
MAX5054BATA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-TDFN
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055AASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055AASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055BASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055BASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056AASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056AASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DVR 4A 20NS DUAL 8SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056BASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056BASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5057AASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5057AASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5057BASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5057BASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5078AATT-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRIVER 6-TDFN
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 32ns,26ns - 4A,4A
MAX5078BATT-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRIVER 6-TDFN
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
LTC4440EMS8E-5#PBF
Linear Technology/Analog Devices
794
3 jours
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MOQ: 1  MPQ: 1
IC HIGH-SIDE DVR HS HV 8-MSOP
Tube - -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 80V 10ns,7ns 1.3V,1.6V 2.4A,2.4A
LTC4440AHMS8E-5#PBF
Linear Technology/Analog Devices
573
3 jours
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MOQ: 1  MPQ: 1
IC HIGH-SIDE DVR HS HV 8-MSOP
Tube - -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 80V 10ns,7ns 1.2V,1.6V 1.1A,1.1A
LTC4440AMPMS8E-5#PBF
Linear Technology/Analog Devices
119
3 jours
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MOQ: 1  MPQ: 1
IC HIGH-SIDE DVR HS HV 8-MSOP
Tube - -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 80V 10ns,7ns 1.2V,1.6V 1.1A,1.1A