- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
45
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET DUAL 20-TQFN
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Tube | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 16ns，14ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR MOSFET DUAL 20-TQFN
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Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 16ns，14ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
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Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 24ns，16ns | - | 4A，8A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 48ns，32ns | - | 2A，4A | ||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
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- | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
160MOHM SMARTFET
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- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | CMOS | Single | High-Side | 1 | IGBT | - | 0.9V，2.1V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
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IC MOSFET DVR 28V HALF 16QFN
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
- | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns，13.5ns | 0.65V，1.4V | - |
