Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS44273LTRPBF
Infineon Technologies
15,397
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
10.2 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Low-Side IGBT,N-Channel MOSFET - 25ns,25ns 0.8V,2.5V 1.5A,1.5A
IRS10752LTRPBF
Infineon Technologies
4,783
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 100V SOT23
10 V ~ 18 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 High-Side N-Channel MOSFET 100V 85ns,40ns 0.8V,2.2V 160mA,240mA
IRS25752LTRPBF
Infineon Technologies
3,470
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 600V SOT23
10 V ~ 18 V -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 High-Side N-Channel MOSFET 600V 85ns,40ns - 160mA,240mA
IR44252LTRPBF
Infineon Technologies
4,788
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5L
5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Low-Side IGBT,N-Channel MOSFET - 85ns,40ns 0.6V,2.7V 300mA,550mA
IRS20752LTRPBF
Infineon Technologies
2,505
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 200V SOT23
10 V ~ 18 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 High-Side N-Channel MOSFET 200V 85ns,40ns 0.8V,2.2V 160mA,240mA
IR44272LTRPBF
Infineon Technologies
2,237
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Low-Side IGBT,N-Channel MOSFET - 10ns,10ns 0.6V,2.7V 1.5A,1.5A
IR44273LTRPBF
Infineon Technologies
1,721
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
5 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Low-Side IGBT,N-Channel MOSFET - 10ns,10ns 0.6V,2.7V 1.5A,1.5A