- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Low-Side | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | High-Side | N-Channel MOSFET | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | High-Side | N-Channel MOSFET | 600V | 85ns,40ns | - | 160mA,240mA | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Low-Side | IGBT,N-Channel MOSFET | - | 85ns,40ns | 0.6V,2.7V | 300mA,550mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | High-Side | N-Channel MOSFET | 200V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Low-Side | IGBT,N-Channel MOSFET | - | 10ns,10ns | 0.6V,2.7V | 1.5A,1.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
5 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Low-Side | IGBT,N-Channel MOSFET | - | 10ns,10ns | 0.6V,2.7V | 1.5A,1.5A |