Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 122
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDF7275KXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 13-TFLGA PG-TFLGA-13-1 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDF7275KXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
DRIVER IC
- 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 13-TFLGA PG-TFLGA-13-1 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDS8165HXUMA1
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 1A,2A
2EDS8165HXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 1A,2A
2EDS8165HXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
DRIVER IC
- 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 1A,2A
2EDS8265HXUMA1
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDS8265HXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDS8265HXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
DRIVER IC
- 3 V ~ 3.5 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDN8523RXUMA1
Infineon Technologies
Enquête
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MOQ: 5000  MPQ: 1
IC GATE DRVR 8TSSOP
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Inverting Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523RXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR 8TSSOP
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Inverting Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523RXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR 8TSSOP
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Inverting Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
1EDN7511BXTSA1
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - - 1.2V,1.9V 4A,8A
1EDN8511BXTSA1
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
2EDN8523GXTMA1
Infineon Technologies
Enquête
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MOQ: 4000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad PG-WSON-8-1 Inverting Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8524GXTMA1
Infineon Technologies
Enquête
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MOQ: 4000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad PG-WSON-8-1 Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
6ED003L06C2X1SA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Die Chip Non-Inverting 3-Phase Half-Bridge 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06NCX1SA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Die Chip Non-Inverting 3-Phase Half-Bridge 6 IGBT 600V 60ns,26ns 1.1V,1.7V -